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| PTF 10048 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS (R) Field Effect Transistor Description The PTF 10048 is an internally matched 30-watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 30 Watts Min - Gain = 10.5 dB Typ at 30 Watts Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 40 Efficiency 45 Output Power (Watts) Efficiency (%) X 30 35 20 10 VDD = 28 V IDQ = 425 mA f = 2170 MHz Output Pow er 25 A-1 100 234 569 48 940 15 0 0 1 2 3 4 5 Input Power (Watts) Package 20237 RF Specifications Characteristic (100% Tested) Symbol Gps P-1dB h Y Min 10 30 30 -- Typ 11 36 40 -- Max -- -- -- 10:1 Units dB Watts % -- Gain (VDD = 28 V, POUT = 10 W, IDQ = 425 mA, f = 2.11 & 2.17 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 425 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. e 1 PTF 10048 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ 65 -- -- 1.8 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 6 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 120 0.66 -40 to +150 1.5 Unit Vdc Vdc C Watts W/C C C/W Typical Performance 12 Gain (dB) 11 50 45 40 Output Power & Efficiency Efficiency (%) 12 Gain (dB) 35 Gain (dB) 10 8 6 4 2 2100 Gain Efficiency (%) 35 30 25 2300 POUT = 10 W 9 VDD = 28 V IDQ = 425 mA 2050 2100 Output Pow er (W) 8 2000 2150 2200 2250 2125 2150 Frequency (MHz) Frequency (MHz) 2 Return Loss 10 VDD = 28 V IDQ = 425 mA 0 25 -5 -10 15 -15 Return Loss -20 -25 5 -30 2175 2200 Efficiency Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Broadband Test Fixture Performance 14 45 e Typical Performance Output Power vs. Supply Voltage 45 -20 PTF 10048 Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V, IDQ = 425 mA f1 = 2169 MHz, f2 = 2170 MHz 3rd Order Output Power (Watts) 40 -30 IMD (dBc) 35 -40 -50 -60 -70 5th 7th 30 IDQ = 425 mA f = 2170 MHz 25 22 24 26 28 30 32 34 0 5 10 15 20 25 30 Supply Voltage (Volts) Output Power (Watts-PEP) Power Gain vs. Output Power 12 160 11 140 Capacitance vs. Supply Voltage * 9 Cds and Cgs (pF) ICQ = 425 mA Power Gain (dB) 120 100 80 60 40 20 0 Crss Cgs VGS = 0 V f = 1 MHz 8 7 5 6 9 8 7 6 0 ICQ = 213 mA ICQ = 106 mA Cds 4 3 2 1 0 VDD = 28 V f = 2170 MHz 1 100 0 10 20 30 40 Output Power (Watts) Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 3 80 130 0.200 0.692 1.183 1.675 2.167 2.658 Voltage normalized to 1.0 V Series show current (A) Crss (pF) 10 PTF 10048 Impedance Data (VDD = 28 V, Pout = 30 W, IDQ = 425 mA) e Frequency D Z Source W R 6.0 10.3 13.2 17.9 18.5 19.6 20.5 jX -16.7 -19.0 -19.3 -17.3 -17.2 -12.3 -4.6 R 3.6 3.4 3.4 3.0 2.8 2.9 3.0 Z Load W jX -4.7 -4.4 -4.1 -3.8 -3.8 -3.5 -3.3 GHz Z Load Z Source 2.00 2.10 G S 2.12 2.15 2.17 2.20 2.30 Z0 = 50 W 4 e Test Circuit PTF 10048 Test Circuit Schematic for f = 2.15 GHz DUT l1 l2, l5 l3 l4 l6 l7 C1, C10 C2, C5, C6, C9 C3, C8 C4 C7 PTF 10048 LDMOS Power Transistor 0.052 l 2.15 GHz Microstrip 11.14 W 0.255 l 2.15 GHz Microstrip 50 W 0.075 l 2.15 GHz Microstrip 50 W 0.143 l 2.15 GHz Microstrip 10.2 W 0.250 l 2.15 GHz Microstrip 75 W 0.125 l 2.15 GHz Microstrip 80 W 10 F Tantulum Capacitor 10 pF Chip Capacitor, ATC 100 B 0.1 F, 50 V Digi-Key P4525-ND 0.2 pF, 50 V Chip Capacitor, ATC 100 A 0.9 pF Chip Capacitor, ATC 100 A J1, J2 L1 L2 R1, R2 R3 SMA Female Connectors, Panel Mount 4.7 nH 6 mm SMT Ferrite Bead 220 W Chip Resistor, P220ECI 1.0 W Chip Resistor, P1.0ECT Circuit Board 0.031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper Parts Layout (not to scale) 5 PTF 10048 Case Outline Specifications Package 20237 e Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com\rfpower Specifications subject to change without notice. L3 (c) 1998, 1999, 2001 Ericsson Inc. EUS/KR 1522-PTF 10048 Uen Rev. A 02-13-01 6 |
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